文献
J-GLOBAL ID:201602228035486078
整理番号:13A0878329
High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45 V
著者 (6件):
Zhang Dongyan
(Suzhou Inst. of Nano-tech and Nano-bionics (SINANO), Chinese Acad. of Sciences Key Lab. of Nanodevices and ...)
,
Zheng Xinhe
(Suzhou Inst. of Nano-tech and Nano-bionics (SINANO), Chinese Acad. of Sciences Key Lab. of Nanodevices and ...)
,
Li Xuefei
(Suzhou Inst. of Nano-tech and Nano-bionics (SINANO), Chinese Acad. of Sciences Key Lab. of Nanodevices and ...)
,
Wu Yuanyuan
(Suzhou Inst. of Nano-tech and Nano-bionics (SINANO), Chinese Acad. of Sciences Key Lab. of Nanodevices and ...)
,
Wang Jianfeng
(Suzhou Inst. of Nano-tech and Nano-bionics (SINANO), Chinese Acad. of Sciences Key Lab. of Nanodevices and ...)
,
Yang Hui
(Suzhou Inst. of Nano-tech and Nano-bionics (SINANO), Chinese Acad. of Sciences Key Lab. of Nanodevices and ...)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
29
号:
6
ページ:
068801-1-068801-4
発行年:
2012年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
発行国:
中国 (CHN)
言語:
英語 (EN)