文献
J-GLOBAL ID:201602230152128314
整理番号:16A0410251
酸化非晶質窒化ケイ素膜のN-Si-O結合状態からの高い量子効率の光ルミネセンス動力学
Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films
著者 (8件):
ZHANG Pengzhan
(School of Electron Sci. and Engineering, Nanjing Univ., Nanjing 210093, CHN)
,
CHEN Kunji
(School of Electron Sci. and Engineering, Nanjing Univ., Nanjing 210093, CHN)
,
LIN Zewen
(School of Electron Sci. and Engineering, Nanjing Univ., Nanjing 210093, CHN)
,
TAN Dameng
(School of Electron Sci. and Engineering, Nanjing Univ., Nanjing 210093, CHN)
,
DONG Hengping
(Taizhou Inst. of Sci. and Technol., Nanjing Univ. of Sci. and Technol., Taizhou 225300, CHN)
,
LI Wei
(School of Electron Sci. and Engineering, Nanjing Univ., Nanjing 210093, CHN)
,
XU Jun
(School of Electron Sci. and Engineering, Nanjing Univ., Nanjing 210093, CHN)
,
HUANG Xinfan
(School of Electron Sci. and Engineering, Nanjing Univ., Nanjing 210093, CHN)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
108
号:
11
ページ:
111103-111103-5
発行年:
2016年03月14日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)