文献
J-GLOBAL ID:201602230166078618
整理番号:16A1286318
a-Si中のボイドの測定::H膜とその影響シリコンヘテロ接合太陽電池【Powered by NICT】
Measurement of voids in a-Si:H film and their influence on silicon heterojunction solar cell
著者 (5件):
Liu Wenzhu
(Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information rechnology (SIMIT), Chinese Academy of Sciences (CAS), Jiading, 201800 Shanghai, PR China)
,
Zhang Liping
(Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information rechnology (SIMIT), Chinese Academy of Sciences (CAS), Jiading, 201800 Shanghai, PR China)
,
Cheng Renfang
(Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information rechnology (SIMIT), Chinese Academy of Sciences (CAS), Jiading, 201800 Shanghai, PR China)
,
Meng Fanying
(Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information rechnology (SIMIT), Chinese Academy of Sciences (CAS), Jiading, 201800 Shanghai, PR China)
,
Liu Zhengxin
(Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information rechnology (SIMIT), Chinese Academy of Sciences (CAS), Jiading, 201800 Shanghai, PR China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
PVSC
ページ:
3072-3073
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)