文献
J-GLOBAL ID:201602231453634098
整理番号:16A0919277
Pd/CuドープZnO/Si及びNi/CuドープZnO/Si Schottkyダイオードの製作及び特徴づけ
Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes
著者 (5件):
Agarwal Lucky
(Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004, India)
,
Singh Brijesh Kumar
(Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004, India)
,
Tripathi Shweta
(Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004, India)
,
Chakrabarti P.
(Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004, India)
,
Chakrabarti P.
(Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
612
ページ:
259-266
発行年:
2016年08月01日
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)