文献
J-GLOBAL ID:201602236036830760
整理番号:13A1254104
H-plasma-assisted aluminum induced crystallization of amorphous silicon
著者 (6件):
Li Juan
(Inst. of Photo-Electronics, Nankai Univ. Tianjin Key Lab. for Photo-Electronic Thin Film Devices and Technol., Tianjin)
,
Liu Ning
(Inst. of Photo-Electronics, Nankai Univ. Tianjin Key Lab. for Photo-Electronic Thin Film Devices and Technol., Tianjin)
,
Luo Chong
(Inst. of Photo-Electronics, Nankai Univ. Tianjin Key Lab. for Photo-Electronic Thin Film Devices and Technol., Tianjin)
,
Meng Zhiguo
(Inst. of Photo-Electronics, Nankai Univ. Tianjin Key Lab. for Photo-Electronic Thin Film Devices and Technol., Tianjin)
,
Xiong Shaozhen
(Inst. of Photo-Electronics, Nankai Univ. Tianjin Key Lab. for Photo-Electronic Thin Film Devices and Technol., Tianjin)
,
Hoi Sing Kwok
(Dep. of Electronic and Computer Engineering, The Hong Kong Univ. of Sci. and Technol., Hong Kong, Kowloon)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
33
号:
6
ページ:
066003-1-066003-4
発行年:
2012年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
発行国:
中国 (CHN)
言語:
英語 (EN)