文献
J-GLOBAL ID:201602240253898824
整理番号:16A0638901
制御層シリコンの自己制限蒸着によるIn0.53Ga0.47As(001)-(2×4)とSi0.5Ge0.5(110)表面不動態化【Powered by NICT】
In0.53Ga0.47As(001)-(2x4) and Si0.5Ge0.5(110) surface passivation by self-limiting deposition of silicon containing control layers
著者 (9件):
Edmonds M.
(Materials Science and Engineering Department, University of California San Diego)
,
Kent T. J
(Materials Science and Engineering Department, University of California San Diego)
,
Wolf S.
(Materials Science and Engineering Department, University of California San Diego)
,
Sardashti K.
(Materials Science and Engineering Department, University of California San Diego)
,
Chang M.
(Applied Materials, Sunnyvale, California)
,
Kachian J.
(Applied Materials, Sunnyvale, California)
,
Droopad R.
(Ingram School of Engineering, Texas State University)
,
Chagarov E.
(Department of Chemistry and Biochemistry, University of California San Diego)
,
Kummel A. C.
(Materials Science and Engineering Department, University of California San Diego)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
VLSI-TSA
ページ:
1-2
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)