文献
J-GLOBAL ID:201602240870825823
整理番号:16A1258529
炭素源としてC_2H_2を用いた窒化ガリウム上のグラフェンの直接成長【Powered by NICT】
Direct growth of graphene on gallium nitride using C_2H_2 as carbon source
著者 (9件):
Wang Bing
(Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences)
,
Zhao Yun
(Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences)
,
Yi Xiaoyan
(Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences)
,
Wang Guohong
(Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences)
,
Liu Zhiqiang
(Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences)
,
Duan Ruirei
(Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences)
,
Huang Peng
(Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences)
,
Wang Junxi
(Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences)
,
Li Jinmin
(Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences)
資料名:
Wulixue Qianyan
(Wulixue Qianyan)
巻:
11
号:
2
ページ:
116803-1-116803-6
発行年:
2016年
JST資料番号:
C2648A
ISSN:
2095-0462
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)