文献
J-GLOBAL ID:201602245268612911
整理番号:13A1913188
An extrinsic f_(max)>100 GHz InAlN/GaN HEMT with AlGaN back barrier
著者 (9件):
Liu Bo
(Sci. and Technol. on ASIC Lab.,Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Feng Zhihong
(Sci. and Technol. on ASIC Lab.,Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Dun Shaobo
(Sci. and Technol. on ASIC Lab.,Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Zhang Xiongwen
(Sci. and Technol. on ASIC Lab.,Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Gu Guodong
(Sci. and Technol. on ASIC Lab.,Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Wang Yuangang
(Sci. and Technol. on ASIC Lab.,Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Xu Peng
(Sci. and Technol. on ASIC Lab.,Hebei Semiconductor Res. Inst., Shijiazhuang)
,
He Zezhao
(Sci. and Technol. on ASIC Lab.,Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Cai Shujun
(Sci. and Technol. on ASIC Lab.,Hebei Semiconductor Res. Inst., Shijiazhuang)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
34
号:
4
ページ:
044006-1-044006-4
発行年:
2013年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
発行国:
中国 (CHN)
言語:
英語 (EN)