文献
J-GLOBAL ID:201602245611770886
整理番号:16A1000965
AlInN/AlN/GaNヘテロ構造の構造解析
Structural investigation of AlInN/AlN/GaN heterostructures
著者 (10件):
Tamer M.
(Faculty of Education, Zirve University, Gaziantep, Turkey)
,
Tamer M.
(Department of Physics, Photonics Research Center, Gazi University, Ankara, Turkey)
,
OEztuerk M. K.
(Department of Physics, Photonics Research Center, Gazi University, Ankara, Turkey)
,
Corekci S.
(Energy Systems Engineering Department, Faculty of Technology, Kirklareli University, Kirklareli, Turkey)
,
Bas Y.
(Department of Physics, Photonics Research Center, Gazi University, Ankara, Turkey)
,
Gueltekin A.
(Department of Physics, Photonics Research Center, Gazi University, Ankara, Turkey)
,
Kurtulus G.
(Department of Physics, Photonics Research Center, Gazi University, Ankara, Turkey)
,
OEzcelik S.
(Department of Physics, Photonics Research Center, Gazi University, Ankara, Turkey)
,
OEzbay E.
(Department of Physics, Nanotechnology Research Center, Bilkent, Ankara, Turkey)
,
OEzbay E.
(Department of Electrical and Electronics Engineering, Nanotechnology Research Center, Bilkent, Ankara, Turkey)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
27
号:
3
ページ:
2852-2859
発行年:
2016年03月
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)