文献
J-GLOBAL ID:201602247836639726
整理番号:16A0726684
信頼性向上のためのフィールドプレートを用いたGaN HEMTの評価【Powered by NICT】
Evaluation of GaN HEMT with field plate for reliability improvement
著者 (9件):
Lin Y. C.
(Department of Materials Science & Engineering, National Chiao-tung University, Taiwan)
,
Lin J. C.
(Department of Materials Science & Engineering, National Chiao-tung University, Taiwan)
,
Lin Y.
(Department of Materials Science & Engineering, National Chiao-tung University, Taiwan)
,
Wu C. H.
(Department of Materials Science & Engineering, National Chiao-tung University, Taiwan)
,
Chin P. C.
(Department of Materials Science & Engineering, National Chiao-tung University, Taiwan)
,
Hsu H. T.
(International College of Semiconductor Technology, National Chiao-tung University, Taiwan)
,
Hsieh T. E.
(Department of Materials Science & Engineering, National Chiao-tung University, Taiwan)
,
Iwai H.
(International College of Semiconductor Technology, National Chiao-tung University, Taiwan)
,
Chang E. Y.
(Department of Materials Science & Engineering, National Chiao-tung University, Taiwan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
CSW
ページ:
1
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)