文献
J-GLOBAL ID:201602248172739197
整理番号:16A0697707
高側適用のための2段階酸化プロセスによるSTI nLDMOSのホットキャリア誘起劣化に及ぼす調査【Powered by NICT】
Investigation on Hot-Carrier-Induced degradation of STI-nLDMOS with two-step-oxide process for high side application
著者 (7件):
Wei Jiaxing
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Zhang Chunwei
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Liu Siyang
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Sun Weifeng
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Su Wei
(CSMC Technologies Corporation, Wuxi, China)
,
Zhang Aijun
(CSMC Technologies Corporation, Wuxi, China)
,
Ma Shulang
(CSMC Technologies Corporation, Wuxi, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
ISPSD
ページ:
383-386
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)