文献
J-GLOBAL ID:201602251582561937
整理番号:16A1150680
部分トレンチ分離を用いたフォトダイオード高フィルファクタ4H-SiCアバランシェフォトダイオード【Powered by NICT】
High Fill-Factor 4H-SiC Avalanche Photodiodes With Partial Trench Isolation
著者 (8件):
Li Lianghui
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Zhou Dong
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Liu Fei
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Lu Hai
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Ren Fangfang
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Chen Dunjun
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Zhang Rong
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Zheng Youdou
(School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
資料名:
IEEE Photonics Technology Letters
(IEEE Photonics Technology Letters)
巻:
28
号:
22
ページ:
2526-2528
発行年:
2016年
JST資料番号:
T0721A
ISSN:
1041-1135
CODEN:
IPTLEL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)