文献
J-GLOBAL ID:201602254079627610
整理番号:16A1030338
最新CMOS接触における酸素誘電体挿入のためのFermi脱ピン止め,双極子と酸化物トンネルに関する考察【Powered by NICT】
Considerations on fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts
著者 (14件):
Borrel J.
(STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles, France)
,
Hutin L.
(CEA, LETI, Minatec Campus, F-38054 Grenoble, France)
,
Grampeix H.
(CEA, LETI, Minatec Campus, F-38054 Grenoble, France)
,
Nolot E.
(CEA, LETI, Minatec Campus, F-38054 Grenoble, France)
,
Ghegin E.
(STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles, France)
,
Rodriguez P.
(CEA, LETI, Minatec Campus, F-38054 Grenoble, France)
,
Tabone C.
(CEA, LETI, Minatec Campus, F-38054 Grenoble, France)
,
Allain F.
(CEA, LETI, Minatec Campus, F-38054 Grenoble, France)
,
Barnes J.-P.
(CEA, LETI, Minatec Campus, F-38054 Grenoble, France)
,
Morand Y.
(STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles, France)
,
Nemouchi F.
(CEA, LETI, Minatec Campus, F-38054 Grenoble, France)
,
Gregoire M.
(STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles, France)
,
Dubois E.
(IEMN, UMR 8520 CNRS, Avenue Poincare ́, BP 60069, 59652 Villeneuve D’Ascq CEDEX, France)
,
Vinet M.
(CEA, LETI, Minatec Campus, F-38054 Grenoble, France)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SNW
ページ:
140-141
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)