文献
J-GLOBAL ID:201602254121778678
整理番号:16A0330030
AlGaN/AlN/GaNヘテロ構造電界効果トランジスタにおける基板バイアスによるスイッチング特性の改善【Powered by NICT】
Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors
著者 (7件):
Yang Ming
(School of Physics, Shandong Univ. National Key Lab. of Application Specific Integrated Circuit (ASIC), Jinan)
,
Lin Zhaojun
(School of Physics, Shandong Univ., Jinan)
,
Zhao Jingtao
(School of Physics, Shandong Univ., Jinan)
,
Wang Yutang
(School of Physics, Shandong Univ., Jinan)
,
Li Zhiyuan
(School of Physics, Shandong Univ., Jinan)
,
Lv Yuanjie
(Hebei Semiconductor Res. Inst. National Key Lab. of Application Specific Integrated Circuit (ASIC), Shijiazhuang)
,
Feng Zhihong
(Hebei Semiconductor Res. Inst. National Key Lab. of Application Specific Integrated Circuit (ASIC), Shijiazhuang)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
24
号:
11
ページ:
117103-1-117103-4
発行年:
2015年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)