文献
J-GLOBAL ID:201602254352780853
整理番号:16A0392741
48積層WL層を持つ256Gb 3b/セル V-NANDフラッシュメモリ
256Gb 3b/Cell V-NAND Flash Memory with 48 Stacked WL Layers
著者 (30件):
KANG Dongku
(Samsung Electronics, Hwaseong, KOR)
,
JEONG Woopyo
(Samsung Electronics, Hwaseong, KOR)
,
KIM Chulbum
(Samsung Electronics, Hwaseong, KOR)
,
KIM Doo-Hyun
(Samsung Electronics, Hwaseong, KOR)
,
CHO Yong Sung
(Samsung Electronics, Hwaseong, KOR)
,
KANG Kyung-Tae
(Samsung Electronics, Hwaseong, KOR)
,
RYU Jinho
(Samsung Electronics, Hwaseong, KOR)
,
KANG Kyung-Min
(Samsung Electronics, Hwaseong, KOR)
,
LEE Sungyeon
(Samsung Electronics, Hwaseong, KOR)
,
KIM Wandong
(Samsung Electronics, Hwaseong, KOR)
,
LEE Hanjun
(Samsung Electronics, Hwaseong, KOR)
,
YU Jaedoeg
(Samsung Electronics, Hwaseong, KOR)
,
CHOI Nayoung
(Samsung Electronics, Hwaseong, KOR)
,
JANG Dong-Su
(Samsung Electronics, Hwaseong, KOR)
,
IHM Jeong-Don
(Samsung Electronics, Hwaseong, KOR)
,
KIM Doogon
(Samsung Electronics, Hwaseong, KOR)
,
MIN Young-Sun
(Samsung Electronics, Hwaseong, KOR)
,
KIM Moo-Sung
(Samsung Electronics, Hwaseong, KOR)
,
PARK An-Soo
(Samsung Electronics, Hwaseong, KOR)
,
SON Jae-Ick
(Samsung Electronics, Hwaseong, KOR)
,
KIM In-Mo
(Samsung Electronics, Hwaseong, KOR)
,
KWAK Pansuk
(Samsung Electronics, Hwaseong, KOR)
,
JUNG Bong-Kil
(Samsung Electronics, Hwaseong, KOR)
,
LEE Doo-Sub
(Samsung Electronics, Hwaseong, KOR)
,
KIM Hyunggon
(Samsung Electronics, Hwaseong, KOR)
,
YANG Hyang-Ja
(Samsung Electronics, Hwaseong, KOR)
,
BYEON Dae-Seok
(Samsung Electronics, Hwaseong, KOR)
,
PARK Ki-Tae
(Samsung Electronics, Hwaseong, KOR)
,
KYUNG Kye-Hyun
(Samsung Electronics, Hwaseong, KOR)
,
CHOI Jeong-Hyuk
(Samsung Electronics, Hwaseong, KOR)
資料名:
Digest of Technical Papers. IEEE International Solid-State Circuits Conference
(Digest of Technical Papers. IEEE International Solid-State Circuits Conference)
巻:
2016
ページ:
130-131,131(1)
発行年:
2016年
JST資料番号:
D0753A
ISSN:
0193-6530
資料種別:
会議録 (C)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)