文献
J-GLOBAL ID:201602255576097644
整理番号:16A0989397
TiCl_4とTMA前駆体に基づく原子層堆積TiAlC金属ゲートの成長機構【Powered by NICT】
Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl_4 and TMA precursors
著者 (6件):
Xiang Jinjuan
(Institute of Microelectronics, Chinese Academy of Sciences)
,
Ding Yuqiang
(Chemical and Material Engineering, Jiangnan University)
,
Du Liyong
(Chemical and Material Engineering, Jiangnan University)
,
Li Junfeng
(Institute of Microelectronics, Chinese Academy of Sciences)
,
Wang Wenwu
(Institute of Microelectronics, Chinese Academy of Sciences)
,
Zhao Chao
(Institute of Microelectronics, Chinese Academy of Sciences)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
3
ページ:
037308-1-037308-4
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)