文献
J-GLOBAL ID:201602255701421296
整理番号:16A1364262
非常に望ましいIII-V半導体の電子バンド構造:TB-mBJ DFT研究
Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies
著者 (14件):
Rehman Gul
(Center for Computational Materials Science, University of Malakand, Chakdara, Pakistan)
,
Rehman Gul
(Department of Physics, University of Malakand, Chakdara, Pakistan)
,
Shafiq M.
(Center for Computational Materials Science, University of Malakand, Chakdara, Pakistan)
,
Shafiq M.
(Department of Physics, University of Malakand, Chakdara, Pakistan)
,
Saifullah
(Center for Computational Materials Science, University of Malakand, Chakdara, Pakistan)
,
Saifullah
(Department of Physics, University of Malakand, Chakdara, Pakistan)
,
Ahmad Rashid
(Department of Chemistry, University of Malakand, Chakdara, Pakistan)
,
Jalali-Asadabadi S.
(Department of Physics, Faculty of Science, University of Isfahan (UI), Isfahan, Iran)
,
Maqbool M.
(Department of Physics and Astronomy, Ball State University, Muncie, IN, USA)
,
Khan Imad
(Center for Computational Materials Science, University of Malakand, Chakdara, Pakistan)
,
Khan Imad
(Department of Physics, University of Malakand, Chakdara, Pakistan)
,
Rahnamaye-Aliabad H.
(Department of Physics, Hakim Sabzevari University, Sabzevar, Iran)
,
Ahmad Iftikhar
(Center for Computational Materials Science, University of Malakand, Chakdara, Pakistan)
,
Ahmad Iftikhar
(Department of Physics, University of Malakand, Chakdara, Pakistan)
資料名:
Journal of Electronic Materials
(Journal of Electronic Materials)
巻:
45
号:
7
ページ:
3314-3323
発行年:
2016年07月
JST資料番号:
D0277B
ISSN:
0361-5235
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)