文献
J-GLOBAL ID:201602257933298318
整理番号:15A1126263
Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells
著者 (8件):
Wang Qiang
(School of Physics, Shandong Univ., Jinan)
,
Ji Ziwu
(School of Physics, Shandong Univ., Jinan)
,
Wang Fan
(School of Physics, Shandong Univ., Jinan)
,
Mu Qi
(School of Physics, Shandong Univ., Jinan)
,
Zheng Yujun
(School of Physics, Shandong Univ., Jinan)
,
Xu Xiangang
(Shandong Univ. State Key Lab. of Crystal Materials, Jinan)
,
Lu Yuanjie
(Hebei Semiconductor Res. Inst. National Key Lab. of Application Specific Integrated Circuit (ASIC), Shijiazhuang)
,
Feng Zhihong
(Hebei Semiconductor Res. Inst. National Key Lab. of Application Specific Integrated Circuit (ASIC), Shijiazhuang)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
24
号:
2
ページ:
024219-1-024219-5
発行年:
2015年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
発行国:
中国 (CHN)
言語:
英語 (EN)