文献
J-GLOBAL ID:201602262920890901
整理番号:16A0881067
パルスレーザ蒸着による種々の配向したサファイア基板上のZnOナノワイヤの無触媒成長【Powered by NICT】
Catalyst-free growth of ZnO nanowires on various-oriented sapphire substrates by pulsed-laser deposition
著者 (8件):
Tetsuya Shimogaki
(Department of Information Science and Electrical Engineering, Kyushu University)
,
Masahiro Takahashi
(Department of Information Science and Electrical Engineering, Kyushu University)
,
Masaaki Yamasaki
(Department of Information Science and Electrical Engineering, Kyushu University)
,
Taichi Fukuda
(Department of Information Science and Electrical Engineering, Kyushu University)
,
Mitsuhiro Higashihata
(Department of Information Science and Electrical Engineering, Kyushu University)
,
Hiroshi Ikenoue
(Department of Information Science and Electrical Engineering, Kyushu University)
,
Daisuke Nakamura
(Department of Information Science and Electrical Engineering, Kyushu University)
,
Tatsuo Okada
(Department of Information Science and Electrical Engineering, Kyushu University)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
37
号:
2
ページ:
023001-1-023001-5
発行年:
2016年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)