文献
J-GLOBAL ID:201602262962494138
整理番号:16A0392822
NBTIモニタ,ジッター低減技術と改善された配電による20nmの9Gb/ピン8GbのGDDR5 DRAM
A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI Monitor, Jitter Reduction Techniques and Improved Power Distribution
著者 (18件):
JOO Hye-Yoon
(Samsung Electronics, Hwaseong, KOR)
,
BAE Seung-Jun
(Samsung Electronics, Hwaseong, KOR)
,
SOHN Young-Soo
(Samsung Electronics, Hwaseong, KOR)
,
KIM Young-Sik
(Samsung Electronics, Hwaseong, KOR)
,
HA Kyung-Soo
(Samsung Electronics, Hwaseong, KOR)
,
AHN Min-Su
(Samsung Electronics, Hwaseong, KOR)
,
KIM Young-Ju
(Samsung Electronics, Hwaseong, KOR)
,
KIM Yong-Jun
(Samsung Electronics, Hwaseong, KOR)
,
KIM Young-Ju
(Samsung Electronics, Hwaseong, KOR)
,
KIM Ju-Hwan
(Samsung Electronics, Hwaseong, KOR)
,
CHOI Won-Jun
(Samsung Electronics, Hwaseong, KOR)
,
SHIN Chang-Ho
(Samsung Electronics, Hwaseong, KOR)
,
KIM Soo Hwan
(Samsung Electronics, Hwaseong, KOR)
,
KIM Byeong-Cheol
(Samsung Electronics, Hwaseong, KOR)
,
KO Seung-Bum
(Samsung Electronics, Hwaseong, KOR)
,
PARK Kwang-Il
(Samsung Electronics, Hwaseong, KOR)
,
JANG Seong-Jin
(Samsung Electronics, Hwaseong, KOR)
,
JIN Gyo-Young
(Samsung Electronics, Hwaseong, KOR)
資料名:
Digest of Technical Papers. IEEE International Solid-State Circuits Conference
(Digest of Technical Papers. IEEE International Solid-State Circuits Conference)
巻:
2016
ページ:
314-315,315(1)
発行年:
2016年
JST資料番号:
D0753A
ISSN:
0193-6530
資料種別:
会議録 (C)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)