文献
J-GLOBAL ID:201602268029458436
整理番号:16A1315747
Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
著者 (3件):
Cho Young Joon
(Graduate School of Energy Science & Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764, Republic of Korea)
,
Cha Hamchorom
(Graduate School of Energy Science & Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764, Republic of Korea)
,
Chang Hyo Sik
(Graduate School of Energy Science & Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764, Republic of Korea)
資料名:
Surface & Coatings Technology
(Surface & Coatings Technology)
巻:
307
号:
PB
ページ:
1096-1099
発行年:
2016年
JST資料番号:
D0205C
ISSN:
0257-8972
資料種別:
逐次刊行物 (A)
発行国:
オランダ (NLD)
言語:
英語 (EN)