文献
J-GLOBAL ID:201602268031717133
整理番号:16A1364208
全溶液処理酸化物薄膜トランジスタにおけるソース/ドレイン電極のための燃焼合成酸化インジウムスズ(ITO)薄膜
Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors
著者 (10件):
Tue Phan Trong
(School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan)
,
Tue Phan Trong
(Core Research for Evolution Science and Technology (CREST), Japan Science and Technology Agency, Kawaguchi, Saitama, Japan)
,
Tue Phan Trong
(ERATO Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan)
,
Inoue Satoshi
(Green Devices Research Center, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan)
,
Inoue Satoshi
(ERATO Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan)
,
Takamura Yuzuru
(School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan)
,
Takamura Yuzuru
(Core Research for Evolution Science and Technology (CREST), Japan Science and Technology Agency, Kawaguchi, Saitama, Japan)
,
Shimoda Tatsuya
(School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan)
,
Shimoda Tatsuya
(Green Devices Research Center, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan)
,
Shimoda Tatsuya
(ERATO Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan)
資料名:
Applied Physics. A. Materials Science & Processing
(Applied Physics. A. Materials Science & Processing)
巻:
122
号:
6
ページ:
Article:623,1-8
発行年:
2016年06月
JST資料番号:
D0256C
ISSN:
0947-8396
CODEN:
APHYCC
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
ドイツ (DEU)
言語:
英語 (EN)