文献
J-GLOBAL ID:201602273016640363
整理番号:16A0977963
超微細化したほぼバリスティックなGeナノワイヤnMOSFETに及ぼすRTNと低周波雑音【Powered by NICT】
RTN and low frequency noise on ultra-scaled near-ballistic Ge nanowire nMOSFETs
著者 (6件):
Wangran Wu
(School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A.)
,
Wu Heng
(School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A.)
,
Si Mengwei
(School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A.)
,
Conrad Nathan
(School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A.)
,
Yi Zhao
(School of Electronic Science and Engineering, Nanjing University, 210093, China)
,
Ye Peide D.
(School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A.)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
VLSI Technology
ページ:
1-2
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)