文献
J-GLOBAL ID:201602275538226367
整理番号:16A0876536
応答曲面法に基づくGaN HEMTの大信号統計モデルと収量推定【Powered by NICT】
A Large-Signal Statistical Model and Yield Estimation of GaN HEMTs Based on Response Surface Methodology
著者 (6件):
Chen Zhikai
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China)
,
Xu Yuehang
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China)
,
Wang Changsi
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China)
,
Wen Zhang
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China)
,
Wu Yunqiu
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China)
,
Xu Ruimin
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China)
資料名:
IEEE Microwave and Wireless Components Letters
(IEEE Microwave and Wireless Components Letters)
巻:
26
号:
9
ページ:
690-692
発行年:
2016年
JST資料番号:
W0099A
ISSN:
1531-1309
CODEN:
IMWCBJ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)