文献
J-GLOBAL ID:201602281108862619
整理番号:16A1286145
高融点金属接触を用いたN_2環境下でのInGaP太陽電池の高温(450°C)動作【Powered by NICT】
High-temperature (450°C) operation of InGaP solar cell under N2 ambient using refractory metal contacts
著者 (18件):
Elarde V. C.
(MicroLink Devices, Niles, IL 60076, United States)
,
Cardwell D.
(MicroLink Devices, Niles, IL 60076, United States)
,
Hillier G.
(MicroLink Devices, Niles, IL 60076, United States)
,
Wibowo A.
(MicroLink Devices, Niles, IL 60076, United States)
,
Hoheisel R.
(George Washington University, Washington, D.C. 20052, United States)
,
Gonzalez M.
(George Washington University, Washington, D.C. 20052, United States)
,
Lumb M.
(George Washington University, Washington, D.C. 20052, United States)
,
Tomasulo S.
(NRC Postdoc residing at the U.S. Naval Research Laboratory, Washington, D.C. 20375, United States)
,
Kotulak N.
(NRC Postdoc residing at the U.S. Naval Research Laboratory, Washington, D.C. 20375, United States)
,
Scheiman D.
(NRC Postdoc residing at the U.S. Naval Research Laboratory, Washington, D.C. 20375, United States)
,
Maximenko S.
(U.S. Naval Research Laboratory, Washington, D.C. 20375, United States)
,
Jenkins P.
(U.S. Naval Research Laboratory, Washington, D.C. 20375, United States)
,
Walters R.
(U.S. Naval Research Laboratory, Washington, D.C. 20375, United States)
,
Heemstra D.
(University of Notre Dame, Notre Dame, IN 46556, United States)
,
Fay P.
(University of Notre Dame, Notre Dame, IN 46556, United States)
,
Wanlass M.
(Wanlass Consulting, Norwood, CO 81423, United States)
,
Osowski M.
(MicroLink Devices, Niles, IL 60076, United States)
,
Pan N.
(MicroLink Devices, Niles, IL 60076, United States)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
PVSC
ページ:
2337-2340
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)