文献
J-GLOBAL ID:201602284946866053
整理番号:13A0948275
The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics
著者 (4件):
Ma Fei
(School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ...)
,
Liu Hongxia
(School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ...)
,
Kuang Qianwei
(School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ...)
,
Fan Jibin
(School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ...)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
21
号:
5
ページ:
057305-1-057305-5
発行年:
2012年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
発行国:
中国 (CHN)
言語:
英語 (EN)