文献
J-GLOBAL ID:201602288235580776
整理番号:16A0977905
低動作電流と固有ダイオード特性を持つ強誘電性HfO_2ベース抵抗スイッチの初めての実証と性能向上【Powered by NICT】
First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property
著者 (6件):
Fujii Shosuke
(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 800, Yamano Isshiki-cho, Yokkaichi 512-8550, Japan)
,
Kamimuta Yuuichi
(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 800, Yamano Isshiki-cho, Yokkaichi 512-8550, Japan)
,
Ino Tsunehiro
(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 800, Yamano Isshiki-cho, Yokkaichi 512-8550, Japan)
,
Nakasaki Yasushi
(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 800, Yamano Isshiki-cho, Yokkaichi 512-8550, Japan)
,
Takaishi Riichiro
(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 800, Yamano Isshiki-cho, Yokkaichi 512-8550, Japan)
,
Saitoh Masumi
(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 800, Yamano Isshiki-cho, Yokkaichi 512-8550, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
VLSI Technology
ページ:
1-2
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)