文献
J-GLOBAL ID:201602290740078387
整理番号:16A1340878
シンクロトロンX線回折による高圧かつ高温下でのa-C:H及びa-C:H:Si膜の構造解析
Structural analysis of a-C:H and a-C:H:Si films under high-pressure and high-temperature by synchrotron X-ray diffraction
著者 (6件):
Hirayama Tomoko
(Dept. of Mechanical Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0394, Japan)
,
Hirayama Tomoko
(PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan)
,
Eguchi Yuri
(Graduate School of Science and Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0394, Japan)
,
Saeki Koichi
(Graduate School of Science and Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0394, Japan)
,
Matsuoka Takashi
(Dept. of Mechanical Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0394, Japan)
,
Kikegawa Takumi
(Condenced Matter Research Center, High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801, Japan)
資料名:
Diamond and Related Materials
(Diamond and Related Materials)
巻:
70
ページ:
83-90
発行年:
2016年11月
JST資料番号:
W0498A
ISSN:
0925-9635
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)