文献
J-GLOBAL ID:201602293880199459
整理番号:13A1100040
Low Power and High Sensitivity MOSFET-Based Pressure Sensor
著者 (5件):
Zhang Zhaohua
(Inst. of Microelectronics, Tsinghua Univ. Tsinghua National Lab. for Information Sci. and Technol., Beijing)
,
Ren Tianling
(Inst. of Microelectronics, Tsinghua Univ. Tsinghua National Lab. for Information Sci. and Technol., Beijing)
,
Zhang Yanhong
(Inst. of Microelectronics, Tsinghua Univ. Tsinghua National Lab. for Information Sci. and Technol., Beijing)
,
Han Ruirui
(Inst. of Microelectronics, Tsinghua Univ. Tsinghua National Lab. for Information Sci. and Technol., Beijing)
,
Liu Litian
(Inst. of Microelectronics, Tsinghua Univ. Tsinghua National Lab. for Information Sci. and Technol., Beijing)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
29
号:
8
ページ:
088501-1-088501-3
発行年:
2012年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
発行国:
中国 (CHN)
言語:
英語 (EN)