文献
J-GLOBAL ID:201602298722943736
整理番号:16A0830156
p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs二重ヘテロ構造ベースのフォトダイオードの1×64線形アレイ
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n +-InAs heterostructure
著者 (10件):
Il’inskaya N. D.
(Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia)
,
Karandashev S. A.
(Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia)
,
Karpukhina N. G.
(Limited Liability Company Ioffe LED Ltd., St. Petersburg, Russia)
,
Lavrov A. A.
(Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia)
,
Lavrov A. A.
(Limited Liability Company Ioffe LED Ltd., St. Petersburg, Russia)
,
Matveev B. A.
(Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia)
,
Remennyi M. A.
(Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia)
,
Stus N. M.
(Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia)
,
Stus N. M.
(Limited Liability Company Ioffe LED Ltd., St. Petersburg, Russia)
,
Usikova A. A.
(Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia)
資料名:
Semiconductors
(Semiconductors)
巻:
50
号:
5
ページ:
646-651
発行年:
2016年05月
JST資料番号:
T0093A
ISSN:
1063-7826
CODEN:
SMICES
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)