文献
J-GLOBAL ID:201702210018320510
整理番号:17A0275474
650V p-GaNゲートH EMTの性能の最大化:動的Oleron特性化とゲート駆動設計の考察【Powered by NICT】
Maximizing the performance of 650 V p-GaN gate HEMTs: Dynamic ron characterization and gate-drive design considerations
著者 (6件):
Wang Hanxing
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Xie Ruiliang
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Liu Cheng
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Wei Jin
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Tang Gaofei
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Chen Kevin J.
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
ECCE
ページ:
1-6
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)