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J-GLOBAL ID:201702210050340965
整理番号:17A0662246
IGBTモジュールにおけるダイアタッチはんだ層上の狭接合温度サイクルの影響に関する実験的研究【Powered by NICT】
Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module
著者 (8件):
Lai Wei
(State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Chen Minyou
(State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Ran Li
(State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Xu Shengyou
(State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Jiang Nan
(State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Wang Xuemei
(School of Electric Power, South China University of Technology, Guangzhou, China)
,
Alatise Olayiwola
(School of Engineering, University of Warwick, Coventry, U.K.)
,
Mawby Philip
(School of Engineering, University of Warwick, Coventry, U.K.)
資料名:
IEEE Transactions on Power Electronics
(IEEE Transactions on Power Electronics)
巻:
32
号:
2
ページ:
1431-1441
発行年:
2017年
JST資料番号:
D0211B
ISSN:
0885-8993
CODEN:
ITPEE8
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)