文献
J-GLOBAL ID:201702210173349377
整理番号:17A1627580
ナノスケール島状SiN-中間層を持つ非極性a面GaNエピ層の結晶品質の異方性と歪の低減【Powered by NICT】
Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiN interlayer
著者 (9件):
Zhao Jianguo
(Advanced Photonics Center, Southeast University, Nanjing 210096, Jiangsu, China)
,
Zhang Xiong
(Advanced Photonics Center, Southeast University, Nanjing 210096, Jiangsu, China)
,
Wu Zili
(Advanced Photonics Center, Southeast University, Nanjing 210096, Jiangsu, China)
,
Dai Qian
(Advanced Photonics Center, Southeast University, Nanjing 210096, Jiangsu, China)
,
Wang Nan
(Advanced Photonics Center, Southeast University, Nanjing 210096, Jiangsu, China)
,
He Jiaqi
(Advanced Photonics Center, Southeast University, Nanjing 210096, Jiangsu, China)
,
Chen Shuai
(Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, College of Physics Science & Technology, Guangxi University, Nanning, 530004, Guangxi, China)
,
Feng Zhe Chuan
(Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, College of Physics Science & Technology, Guangxi University, Nanning, 530004, Guangxi, China)
,
Cui Yiping
(Advanced Photonics Center, Southeast University, Nanjing 210096, Jiangsu, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
729
ページ:
992-996
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)