文献
J-GLOBAL ID:201702210318009834
整理番号:17A1427004
新規構造における金属-酸化物-半導体電界効果トランジスタの容量-電圧特性の正確なシミュレーション研究【Powered by NICT】
An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures
著者 (4件):
Yu Eunseon
(Department of Electronics Engineering, Gachon University, Gyeonggi-do 13120, Republic of Korea)
,
Cho Seongjae
(Department of Electronics Engineering, Gachon University, Gyeonggi-do 13120, Republic of Korea)
,
Cho Seongjae
(Graduate School of IT Convergence Engineering, Gachon University, Gyeonggi-do 13120, Republic of Korea)
,
Park Byung-Gook
(Department of Electrical and Computer Engineering with Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Republic of Korea)
資料名:
Physica B. Condensed Matter
(Physica B. Condensed Matter)
巻:
521
ページ:
305-311
発行年:
2017年
JST資料番号:
H0676B
ISSN:
0921-4526
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)