文献
J-GLOBAL ID:201702211472019684
整理番号:17A0312564
大きいヒステリシスを有する高移動度マルチビット不揮発性メモリ素子に基づく有機電界効果トランジスタ【Powered by NICT】
High mobility multibit nonvolatile memory elements based organic field effect transistors with large hysteresis
著者 (9件):
Zhang Yong
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China)
,
Lang Caili
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China)
,
Fan Jingze
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China)
,
Shi Lei
(Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China)
,
Yi Yuanping
(Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China)
,
Yu Qingjiang
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China)
,
Guo Fengyun
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China)
,
Wang Jinzhong
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China)
,
Zhao Liancheng
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, China)
資料名:
Organic Electronics
(Organic Electronics)
巻:
35
ページ:
53-58
発行年:
2016年08月
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)