文献
J-GLOBAL ID:201702211550705016
整理番号:17A1020061
反応N_2ガスとAl蒸着で成長させたAlNホイスカの形態【Powered by NICT】
Morphology of AlN whiskers grown by reacting N2 gas and Al vapor
著者 (9件):
Matsumoto M.
(Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan)
,
Saitou H.
(Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan)
,
Takeuchi Y.
(Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan)
,
Harada S.
(Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan)
,
Harada S.
(Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan)
,
Tagawa M.
(Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan)
,
Tagawa M.
(Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan)
,
Ujihara T.
(Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan)
,
Ujihara T.
(Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
468
ページ:
576-580
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)