文献
J-GLOBAL ID:201702211694035764
整理番号:17A2006259
急冷プロセス中の液体GaNにおける結晶構造と欠陥【Powered by NICT】
Crystalline structures and defects in liquid GaN during rapid cooling processes
著者 (7件):
Gao Tinghong
(Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China)
,
Li Kaiwen
(Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China)
,
Li Yidan
(Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China)
,
Hu Xuechen
(Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China)
,
Ren Lei
(Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China)
,
Luo Xiangyang
(Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China)
,
Xie Quan
(Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
74
ページ:
46-50
発行年:
2018年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)