文献
J-GLOBAL ID:201702211749590274
整理番号:17A1121876
65cm V~ 1S~ 1以上の電子移動度をもつ溶液法で作製した酸化ネオジム/ZnO薄膜トランジスタ【Powered by NICT】
Solution-Processed Neodymium Oxide/ZnO Thin-Film Transistors with Electron Mobility in Excess of 65 cm V-1 s-1
著者 (7件):
Esro Mazran
(Engineering Department, Lancaster University, Lancaster, LA1 4YR, UK)
,
Kolosov Oleg
(Quantum Technology Centre, Department of Physics, University of Lancaster, Lancaster, LA1 4YW, UK)
,
Stolojan Vlad
(Advanced Technology Institute, Electronic and Electrical Engineering, University of Surrey, Guildford, GU2 7HX, UK)
,
Jones Peter J.
(Engineering Department, Lancaster University, Lancaster, LA1 4YR, UK)
,
Milne William I.
(Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK)
,
Milne William I.
(Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8550, Japan)
,
Adamopoulos George
(Engineering Department, Lancaster University, Lancaster, LA1 4YR, UK)
資料名:
Advanced Electronic Materials
(Advanced Electronic Materials)
巻:
3
号:
4
ページ:
null
発行年:
2017年
JST資料番号:
W2482A
ISSN:
2199-160X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)