文献
J-GLOBAL ID:201702211783476244
整理番号:17A0204232
Ku-バンド応用のための100W GaNH EMTの設計,製作と特性評価【Powered by NICT】
Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application
著者 (6件):
Ren Chunjiang
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electron Devices Institute)
,
Zhong Shichang
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electron Devices Institute)
,
Li Yuchao
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electron Devices Institute)
,
Li Zhonghui
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electron Devices Institute)
,
Kong Yuechan
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electron Devices Institute)
,
Chen Tangsheng
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electron Devices Institute)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
37
号:
8
ページ:
084002-1-084002-6
発行年:
2016年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)