文献
J-GLOBAL ID:201702211861298771
整理番号:17A0206090
2次元遷移金属二カルコゲン化物に基づいたオプトエレクトロニックデバイス【Powered by NICT】
Optoelectronic devices based on two-dimensional transition metal dichalcogenides
著者 (7件):
Tian He
(Ming Hsieh Department of Electrical Engineering, University of Southern California)
,
Chin Matthew L
(United States Army Research Laboratory)
,
Najmaei Sina
(United States Army Research Laboratory)
,
Guo Qiushi
(Department of Electrical Engineering, Yale University)
,
Xia Fengnian
(Department of Electrical Engineering, Yale University)
,
Wang Han
(Ming Hsieh Department of Electrical Engineering, University of Southern California)
,
Dubey Madan
(United States Army Research Laboratory)
資料名:
Nami Yanjiu
(Nami Yanjiu)
巻:
9
号:
6
ページ:
1543-1560
発行年:
2016年
JST資料番号:
C2652A
ISSN:
1998-0124
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)