文献
J-GLOBAL ID:201702211898973178
整理番号:17A0323795
熱活性化delaid蛍光素子のドーピング濃度,宿主の電荷輸送と寿命の相関【Powered by NICT】
Correlation of doping concentration, charge transport of host, and lifetime of thermally activated delayed fluorescent devices
著者 (4件):
Song Wook
(School of Chemical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi, 440-746, Republic of Korea)
,
Lee Woochul
(Advanced Materials R&D, LG Chem Research Park, 188, Munji-ro, Yuseong-gu, Daejeon, Republic of Korea)
,
Kim Kong Kyeom
(Advanced Materials R&D, LG Chem Research Park, 188, Munji-ro, Yuseong-gu, Daejeon, Republic of Korea)
,
Lee Jun Yeob
(School of Chemical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi, 440-746, Republic of Korea)
資料名:
Organic Electronics
(Organic Electronics)
巻:
37
ページ:
252-256
発行年:
2016年
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)