文献
J-GLOBAL ID:201702212133610586
整理番号:17A0911190
a-InGaZnO薄膜トランジスタのサブギャップ状態密度による赤外光検出の研究【Powered by NICT】
Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors
著者 (11件):
Lee Heesung
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
,
Kim Junyeap
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
,
Kim Jaewon
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
,
Kim Seong Kwang
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
,
Lee Yongwoo
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
,
Kim Jae-Young
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
,
Jang Jun Tae
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
,
Park Jaewon
(Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, China)
,
Choi Sung-Jin
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
,
Kim Dae Hwan
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
,
Kim Dong Myong
(School of Electrical Engineering, Kookmin University, Seoul, South Korea)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
5
ページ:
584-587
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)