文献
J-GLOBAL ID:201702212237882257
整理番号:17A0403039
分子ビームエピタクシーにより成長させたエピタキシャル高屈折率Bi_2Se_3(221)膜における歪【Powered by NICT】
Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy
著者 (9件):
Li Bin
(Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong)
,
Chen Weiguang
(College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007, China)
,
Chen Weiguang
(School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044, China)
,
Guo Xin
(Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong)
,
Ho Wingkin
(Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong)
,
Dai Xianqi
(College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007, China)
,
Dai Xianqi
(School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044, China)
,
Jia Jinfeng
(Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Collaborative Innovation Center of Advanced Microstructures, Department of Physics and Astronomy, Shanghai Jiaotong University, 800 Dongchuan Road, Shanghai 200240, China)
,
Xie Maohai
(Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
396
ページ:
1825-1830
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)