文献
J-GLOBAL ID:201702212257698133
整理番号:17A0697386
PINアモルファスシリコン薄膜太陽電池のためのn型層としてPをドープしたけい素に富むSiN_x膜の微細構造と光電的性質【Powered by NICT】
Microstructure and photoelectric properties of P-doped silicon-rich SiNx film as an n-type layer for PIN-type amorphous silicon thin film solar cells
著者 (8件):
Ma Deng-Hao
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Zhang Wei-Jia
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Jiang Zhao-Yi
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Ma Qiang
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Ma Xiao-Bo
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Fan Zhi-Qiang
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Song Deng-Yuan
(Yingli Solar, 3399 Chaoyang North Street, Baoding, China)
,
Zhang Lei
(Yingli Solar, 3399 Chaoyang North Street, Baoding, China)
資料名:
Solar Energy
(Solar Energy)
巻:
144
ページ:
808-817
発行年:
2017年
JST資料番号:
E0099A
ISSN:
0038-092X
CODEN:
SRENA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)