文献
J-GLOBAL ID:201702212482060289
整理番号:17A0855285
n型Siの表面処理の影響:Pおよびp型SiGe低抵抗けい化物接触に及ぼすB半導体【Powered by NICT】
Impact of surface preparation for n-type Si:P and p-type SiGe:B semiconductors on low resistance silicide contacts
著者 (9件):
Carr A.
(IBM Research at Albany Nano-Technology Center, 257 Fuller Road, Albany, NY 12203, USA)
,
Peethala B.
(IBM Research at Albany Nano-Technology Center, 257 Fuller Road, Albany, NY 12203, USA)
,
Raymond M.
(GLOBALFOUNDRIES TD, 257 Fuller Road, Albany, NY 12203, USA)
,
Adusumilli P.
(IBM Research at Albany Nano-Technology Center, 257 Fuller Road, Albany, NY 12203, USA)
,
Kamineni V.
(GLOBALFOUNDRIES TD, 257 Fuller Road, Albany, NY 12203, USA)
,
Niu C.
(GLOBALFOUNDRIES TD, 257 Fuller Road, Albany, NY 12203, USA)
,
Arceo De La Pena A.
(IBM Research at Albany Nano-Technology Center, 257 Fuller Road, Albany, NY 12203, USA)
,
Canaperi D.F.
(IBM Research at Albany Nano-Technology Center, 257 Fuller Road, Albany, NY 12203, USA)
,
Siddiqui S.
(GLOBALFOUNDRIES TD, 257 Fuller Road, Albany, NY 12203, USA)
資料名:
Microelectronic Engineering
(Microelectronic Engineering)
巻:
173
ページ:
22-26
発行年:
2017年
JST資料番号:
C0406B
ISSN:
0167-9317
CODEN:
MIENEF
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)