文献
J-GLOBAL ID:201702212562477160
整理番号:17A0404129
UVレーザ/RTAアニールしたAlドープZnO薄膜の増大したコンダクタンス特性【Powered by NICT】
Enhanced conductance properties of UV laser/RTA annealed Al-doped ZnO thin films
著者 (8件):
Kim Jinhwan
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Republic of Korea)
,
Ji Jae-Hoon
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Republic of Korea)
,
Min Sung-Wook
(Hardram, Gyeonggi-do 156-58, Republic of Korea)
,
Jo Gae-Hun
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Republic of Korea)
,
Jung Min-Woo
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Republic of Korea)
,
Park Min-Jae
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Republic of Korea)
,
Lee Sang-Kwon
(Department of Physics, Chung-Ang University, Seoul 156-756, Republic of Korea)
,
Koh Jung-Hyuk
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Republic of Korea)
資料名:
Ceramics International
(Ceramics International)
巻:
43
号:
4
ページ:
3900-3904
発行年:
2017年
JST資料番号:
H0705A
ISSN:
0272-8842
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)