文献
J-GLOBAL ID:201702212799903804
整理番号:17A0214200
再成長p GaN/AlGaN/GaN半極性ゲート構造を用いたGaN基板上の1.7kV/1.0mΩcm~2ノーマリオフ垂直GaNトランジスタ【Powered by NICT】
1.7 kV/1.0 mΩcm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
著者 (8件):
Shibata Daisuke
(Automotive and Industrial Systems Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan)
,
Kajitani Ryo
(Automotive and Industrial Systems Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan)
,
Ogawa Masahiro
(Automotive and Industrial Systems Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan)
,
Tanaka Kenichiro
(Automotive and Industrial Systems Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan)
,
Tamura Satoshi
(Automotive and Industrial Systems Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan)
,
Hatsuda Tsuguyasu
(Automotive and Industrial Systems Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan)
,
Ishida Masahiro
(Automotive and Industrial Systems Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan)
,
Ueda Tetsuzo
(Automotive and Industrial Systems Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
10.1.1-10.1.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)