文献
J-GLOBAL ID:201702213459654949
整理番号:17A0444818
エッチングプロセスと結合したプラズマ増強Se蒸気セレン化による均一なCu(In,Ga)Se2薄膜の作製【Powered by NICT】
Fabrication of homogeneous CIGS thin film by plasma-enhanced Se vapor selenization coupled with etching process
著者 (5件):
Zhang Xiaoqing
(Guangdong Engineering Research Center of Green Manufacturing for Energy-Saving and New-Energy Technology, School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou 510640, China)
,
Huang Yunxiang
(Guangdong Engineering Research Center of Green Manufacturing for Energy-Saving and New-Energy Technology, School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou 510640, China)
,
Yuan Wei
(Guangdong Engineering Research Center of Green Manufacturing for Energy-Saving and New-Energy Technology, School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou 510640, China)
,
Tang Yong
(Guangdong Engineering Research Center of Green Manufacturing for Energy-Saving and New-Energy Technology, School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou 510640, China)
,
Li Lin
(Guangdong Engineering Research Center of Green Manufacturing for Energy-Saving and New-Energy Technology, School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou 510640, China)
資料名:
Materials Letters
(Materials Letters)
巻:
190
ページ:
276-279
発行年:
2017年
JST資料番号:
E0935A
ISSN:
0167-577X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)