文献
J-GLOBAL ID:201702213750212865
整理番号:17A0831411
直接湿式酸化による絶縁体上の炭化けい素ナノワイヤの形成【Powered by NICT】
Formation of silicon carbide nanowire on insulator through direct wet oxidation
著者 (9件):
Phan Hoang-Phuong
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
,
Ina Ginnosuke
(Department of Mechanical Engineering, University of Hyogo, Hyogo, Japan)
,
Dinh Toan
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
,
Kozeki Takahiro
(Department of Mechanical Engineering, University of Hyogo, Hyogo, Japan)
,
Nguyen Tuan-Khoa
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
,
Namazu Takahiro
(Department of Mechanical Engineering, Aichi Institute of Technology, Toyota, Japan)
,
Qamar Afzaal
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
,
Dao Dzung Viet
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
,
Nguyen Nam-Trung
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
資料名:
Materials Letters
(Materials Letters)
巻:
196
ページ:
280-283
発行年:
2017年
JST資料番号:
E0935A
ISSN:
0167-577X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)