文献
J-GLOBAL ID:201702214062602469
整理番号:17A0407310
アルミニウム支援結晶化によるSi上のSi_xGe_1xのエピタキシャル成長のその場X線回折研究【Powered by NICT】
In situ X-ray diffraction study on epitaxial growth of SixGe1-x on Si by aluminium-assisted crystallization
著者 (4件):
Liu Ziheng
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia)
,
Hao Xiaojing
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia)
,
Ho-Baillie Anita
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia)
,
Green Martin A.
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
695
ページ:
1672-1676
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)